TEM Observation of Defects Induced by Ni Contamination on a Si(100) Surface
- 1 March 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (3A) , L333-336
- https://doi.org/10.1143/jjap.28.l333
Abstract
The behavior of Si(100) surface defects induced by intentional Ni contamination was studied by means of etch-pit observation and transmission electron microscopy. After annealing at 1150°C for 1 hour in N2 atmosphere, shallow pits (SP) were observed only on the surface of the wafer. These SP were thought to be attributable to NiSi2-type silicides formed on the surface by the selected area diffraction pattern. During the additionl thermal oxidation, oxidation-induced stacking faults (OSF) were always formed at each of the large SP but not always at small ones.Keywords
This publication has 6 references indexed in Scilit:
- A Method of Quantitative Contamination with Metallic Impurities of the Surface of a Silicon WaferJapanese Journal of Applied Physics, 1988
- TEM Observation of Defects Induced by Cu Contamination on Si(100) SurfaceJapanese Journal of Applied Physics, 1988
- Characterization of haze-forming precipitates in siliconJournal of Applied Physics, 1988
- Analysis of plate and colony precipitates decorating stacking faults in a single-crystal siliconJournal of Applied Physics, 1988
- The atomic structure of the NiSi2-(001)Si interfacePhilosophical Magazine A, 1984
- Atomic structure of the NiSi2/(111)Si interfacePhilosophical Magazine A, 1982