A Method of Quantitative Contamination with Metallic Impurities of the Surface of a Silicon Wafer
- 1 December 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (12A) , L2361-2363
- https://doi.org/10.1143/jjap.27.l2361
Abstract
A method of quantitative and uniform contamination of the surface of a silicon wafer with a metallic impurity in low-level quantities using spin coating with a contaminated aqueous solution was developed. Fe, Ni, Cu and Al were examined and the quantities of these metallic impurities on the surface were controlled by the concentration of metal ions in the contaminated solution. Using this method, the influence on the recombination carrier lifetime was quantitatively investigated. A significant degradation of the recombination lifetime was observed for more than 1011 atoms/cm2 of impurities Cu, Ni and Fe on the surface.Keywords
This publication has 7 references indexed in Scilit:
- Comparison of Gettering Techniques by Means of Intentional Quantitative Cu ContaminationJapanese Journal of Applied Physics, 1988
- Characterization of haze-forming precipitates in siliconJournal of Applied Physics, 1988
- Anomalous diffusion and gettering of transition metals in siliconApplied Physics Letters, 1986
- Metal Impurities near the SiO2 ‐ Si InterfaceJournal of the Electrochemical Society, 1984
- Implantation Gettering of Gold in SiliconJournal of the Electrochemical Society, 1981
- A Neutron Activation Analysis Study of the Sources of Transition Group Metal Contamination in the Silicon Device Manufacturing ProcessJournal of the Electrochemical Society, 1981
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968