Auger Electron Spectroscopy Study on the Stability of the Interface between Deposited Cu9Al4 Intermetallic Compound Film and Si
- 1 April 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (4A) , L632-635
- https://doi.org/10.1143/jjap.30.l632
Abstract
The interaction of deposited Cu9Al4 intermetallic compound film with a silicon substrate is studied by Auger electron spectroscopy. Although the incorporation of silicon into the Cu9Al4 film with low concentration level is observed, the interface is stable up to the annealing temperature of 700°C without forming aluminum spikes or a copper silicide layer. It is revealed that Cu9Al4 film is a useful material to realize a stable interface when employed as a metallization material for silicon devices.Keywords
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