Interaction of Al3Ta Intermetallic Compound Film with Si
- 1 December 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (12A) , L2262
- https://doi.org/10.1143/jjap.27.l2262
Abstract
The interaction of deposited Al3Ta intermetallic compound film with a silicon substrate is studied by Auger electron spectroscopy in order to examine the suitability of film for use instead of aluminum as a metallization material. Penetration of aluminum into silicon and formation of aluminum spikes are completely blocked by a thin interfacial layer consisting of Ta and Si formed at the interface between Al3Ta and silicon. It is revealed that Al3Ta film is a useful material as a high-quality metallization for silicon devices.Keywords
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