InP HBT technology and applications
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- A flexible 3-inch fabrication line for InP-based HEMT and HBT MMIC productionPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- An InP HEMT W-band amplifier with monolithically integrated HBT bias regulationIEEE Microwave and Guided Wave Letters, 1997
- Commercial heterojunction bipolar transistor production by molecular beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- High-gain Al0.48In0.52As/Ga0.53As vertical n-p-n heterojunction bipolar transistors grown by molecular-beam epitaxyIEEE Electron Device Letters, 1983