Comparison of Auger recombination in GaInAs-AlInAs multiple quantum well structure and in bulk GaInAs
- 1 June 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 22 (6) , 774-780
- https://doi.org/10.1109/jqe.1986.1073035
Abstract
No abstract availableKeywords
This publication has 38 references indexed in Scilit:
- Temperature dependence of carrier lifetime and Auger recombination in 1.3 μm InGaAsPJournal of Applied Physics, 1985
- Room-temperature excitons in 1.6-μm band-gap GaInAs/AlInAs quantum wellsApplied Physics Letters, 1985
- Electronic structure of two-dimensional semiconductor systemsJournal of Luminescence, 1985
- Subnanosecond carriers lifetime measurement in 1.3μ InGaAsPJournal of Luminescence, 1984
- Recombination in electron-hole droplets in polar and non-polar indirect band gap semiconductors and carrier concentration power lawSolid State Communications, 1984
- Auger recombination in P-type GaSbJournal of Luminescence, 1981
- Superlattice band structure in the envelope-function approximationPhysical Review B, 1981
- Observation of the excited level of excitons in GaAs quantum wellsPhysical Review B, 1981
- Dependence of the structural and optical properties of GaAs-Ga1−xAlxAs multiquantum-well structures on growth temperatureApplied Physics Letters, 1981
- Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductorsPhysical Review B, 1976