A Novel Growth Method for High Quality GaAs/CaF2/Si(111) Structures by Using “Type-A” CaF2 Film

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1 January 1991

journal article
Published by Springer Nature in MRS Proceedings

Vol. 237
https://doi.org/10.1557/proc-237-505

Abstract

No abstract available

Keywords

This publication has 8 references indexed in Scilit:

Effect of Substrate Off-Orientation on GaAs/CaF₂/Si(111) Structure with Rotational Twin
Japanese Journal of Applied Physics, 1991
Photoluminescence from GaAs/CaF₂/Si Structure Grown by Electron-Beam Exposure (EBE) and Epitaxy Method
Japanese Journal of Applied Physics, 1991
Optimum Growth Conditions of GaAs(111)B Layers for Good Electrical Properties by Molecular Beam Epitaxy
Japanese Journal of Applied Physics, 1990
Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF₂/Si Structures
Japanese Journal of Applied Physics, 1988
Evidence for the influence of interfacial atomic structure on electrical properties at the epitaxial ${CaF}_{2}$ /Si(111) interface
Physical Review Letters, 1988
Electrical Properties and Structural Defects in Epitaxial CaF₂ on Si
MRS Proceedings, 1986
The Growth and Characterization of Epitaxial Fluoride Films on Semiconductors
MRS Proceedings, 1983
Growth of single-crystal CoSi2 on Si(111)
Applied Physics Letters, 1982