Photoluminescence from GaAs/CaF2/Si Structure Grown by Electron-Beam Exposure (EBE) and Epitaxy Method
- 1 March 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (3B) , L444-446
- https://doi.org/10.1143/jjap.30.l444
Abstract
The GaAs layers grown on CaF2/Si(111) structures by the electron-beam exposure and epitaxy (EBE-epitaxy) method were studied by photoluminescence (PL) measurements at the temperatures ranging from 10 K to 300 K for the first time. It is shown that the EBE-epitaxy was effective to improve the PL intensity of the GaAs layer grown on CaF2/Si structure, and this structure has a high potential for optical device applications. Furthermore, the stress of the GaAs layer grown on CaF2/Si substrate is expected to be reduced by the CaF2 layer compared with that of GaAs/Si structure.Keywords
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