p-type ZnSe homoepitaxial layers grown by molecular beam epitaxy with nitrogen radical doping
- 1 July 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (1) , 439-442
- https://doi.org/10.1063/1.350271
Abstract
We have grown high‐quality homoepitaxial layers of p‐type ZnSe for the first time. The layers were grown on dry‐etched ZnSe substrates by molecular‐beam epitaxy with nitrogen radical doping. The p‐type conduction with carrier concentration of 8.9×1015 cm−3 at 300 K was confirmed by Hall measurement. Low‐temperature photoluminescence from the N‐doped ZnSe layers was dominated by single acceptor‐bound exciton emission I1 at 2.7931 eV, which indicates a formation of a number of shallow acceptors and strain free of the homoepitaxial layers.This publication has 17 references indexed in Scilit:
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