Direct Comparison of Photo- and Electroluminescence in Pb1−xSnxTe Diode Lasers
- 16 May 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 77 (1) , 175-179
- https://doi.org/10.1002/pssa.2210770121
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Spectra of photo- and electroluminescence of bismuth-doped Pb1−xSnxTePhysica Status Solidi (a), 1981
- Junction migration in PbTe-PbSnTe heterostructuresJournal of Applied Physics, 1981
- Nonradiative and Radiative Recombination in Lead ChalcogenidesPhysica Status Solidi (b), 1980
- Recent advances in lead-chalcogenide diode lasersApplied Physics A, 1979
- Homojunction lead-tin-telluride diode lasers with increased frequency tuning rangeIEEE Journal of Quantum Electronics, 1977
- Characteristics of tunable Pb1−xSnx Te junction lasers in the 8–12-μm regionJournal of Applied Physics, 1973