Nonradiative and Radiative Recombination in Lead Chalcogenides
- 1 May 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 99 (1) , 129-138
- https://doi.org/10.1002/pssb.2220990111
Abstract
In a wide range of temperature and doping level the small signal lifetime for Auger recombination, spontaneous emission of radiation, and for spontaneous emission of plasmons is calculated in the compounds Pb0.78Sno. 22Te and Pb0.91Sno0.09Se. In the calculation degeneracy of the carrier gas and anisotropy of band structure is taken into account. At donor concentrations ND > 1019 cm−3, recombination by emission of plasmons dominates. For ND < 5 ×1016 cm−3 radiative recombination dominates in Pb0.78. Sno22Se up to temperatures TL < 180 K, in Pb0.09Se, however, up to 230 K.Keywords
This publication has 15 references indexed in Scilit:
- A New Approach to Auger Recombination. Application to Lead ChalcogenidesPhysica Status Solidi (b), 1980
- Calculation of the interband absorption in lead chalcogenides using a multiband modelPhysica Status Solidi (b), 1979
- Recombination in small-gap Pb1−xSnxTeSolid-State Electronics, 1978
- Electron scattering interaction with coupled plasmon-polar-phonon modes in degenerate semiconductorsPhysical Review B, 1978
- On the interband absorption in lead chalcogenidesPhysica Status Solidi (b), 1978
- Gain-frequency-current relation for Pb1-xSnxTe double heterostructure lasersIEEE Journal of Quantum Electronics, 1977
- Auger recombination and junction resistance in lead-tin tellurideJournal of Applied Physics, 1976
- Band Inversion ofAlloys under Hydrostatic Pressure. I. Theoretical Band Structure AnalysisPhysical Review B, 1973
- Recombination in Semiconductors by Excitation of PlasmonsPhysica Status Solidi (b), 1972
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964