In situ determination of flux nonuniformities during molecular beam epitaxial growth
- 9 September 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (11) , 1317-1319
- https://doi.org/10.1063/1.105486
Abstract
We have observed an amplitude modulation superimposed on growth induced reflection high energy electron diffraction (RHEED) oscillations in molecular beam epitaxial growth of GaAs, AlSb, and GaSb. An analysis of spatially resolved luminescence measurements from a single GaAs/Al0.3Ga0.7As quantum well and RHEED oscillation data verifies an earlier suggestion of Van Hove and co‐workers that this modulation is related to nonuniform group III fluxes at the substrate. This phenomenon is very useful because it allows a quantitative in situ determination of group III flux nonuniformity. Furthermore, this study indicates that theories relating the decay of the RHEED oscillations to growth induced roughening of the surface should account for modifications that arise in the apparent decay rate because of flux nonuniformities.Keywords
This publication has 8 references indexed in Scilit:
- Interfaces in GaAs/AlAs quantum well structuresApplied Physics Letters, 1990
- Reflection high energy electron diffraction characteristic absences in GaAs(100) (2×4)–As: A tool for determining the surface stoichiometryJournal of Vacuum Science & Technology B, 1990
- Luttinger parameters for GaAs determined from the intersubband transitions inmultiple quantum wellsPhysical Review B, 1989
- A combined computer simulation, RHEED intensity dynamics and photoluminescence study of the surface kinetics controlled interface formation in MBE grown GaAs/AlxGa1−xAs(100) quantum well structuresJournal of Crystal Growth, 1987
- Elimination of flux transients in molecular beam epitaxyJournal of Vacuum Science & Technology B, 1986
- The dependence of RHEED oscillations on MBE growth parametersJournal of Vacuum Science & Technology B, 1985
- Energy-gap discontinuities and effective masses for quantum wellsPhysical Review B, 1984
- A pragmatic approach to adatom-induced surface reconstruction of III-V compoundsJournal of Applied Physics, 1983