Luttinger parameters for GaAs determined from the intersubband transitions inGaAs/AlxGa1−xAsmultiple quantum wells

Electronic Raman scattering (ERS) measurements of photoexcited holes have been performed on $\mathrm{GaAs}/{\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$ multiple quantum wells grown in the [111] $b$ and [100] directions. These measurements indicate that the heavy- and light-hole masses along the [111] direction are $0.75m_0$ and $0.082m_0$, respectively. These values, compared with the heavy- and light-hole masses in the [100] direction ($0.34m_0$ and $0.094m_0$ respectively), reveal the highly anisotropic nature of the valence band in GaAs. We propose a new set of Luttinger parameters that describes this anisotropy.