Raman microprobe measurements of residual strains at the interfaces of Si on quartz

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Abstract
In order to quantitatively determine the residual stresses at the interfaces of laminate composite materials, a model involving exponential stress gradient in the substrate and no stress gradient in the film was derived. The measurements of residual strains at the Si/quartz interfaces using the Raman microprobe were compared to expected strains by the model. The model shows that a small volume of substrate near the interface about 2 times the film thickness was affected by the thermal mismatch of the two regions. Approximately 5–10 times higher residual strains were expected at the substrate-side interfaces compared to the measured results. This is explained by the experiments averaging along the probe thickness of about 10μm resolution. The recrystallization process of Si film by thermal annealing was also investigated using Raman spectroscopy.