An analytical charge control model for AlGaAs modulation-doped field effect transistors

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Abstract
An analytical charge control model for AlGaAs modulation-doped field effect transistors has been developed. The model has two regions: the linear, represented by a linear correspondence, and the saturation, represented by an exponential function. Using two fitting parameters, the slope of the linear curve is modified to reduce the subthreshold current and to determine the point separating the linear and saturation regions. Using this model, the device performance can be predicted to a very high degree of accuracy, since the charge-voltage relation has been accurately modeled using parameters related to device characteristics and dimensions. A dc model for the device current-voltage (I-V) characteristics has been developed. The parasitic current which may flow through the doped layer of the channel has been considered. The velocity saturation of the charges has been accounted for, and the saturation drain-source voltage has been accurately determined. This model can provide accuracy without sacrificing simplicity. The model has been successfully implemented in a simulation program with integrated circuit emphasis.

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