Photoluminescence of as-grown and thermally annealed InGaAsN/GaAs quantum wells grown by molecular beam epitaxy
- 1 May 1999
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 17 (3) , 1144-1146
- https://doi.org/10.1116/1.590710
Abstract
InGaAsN/GaAs quantum wells on GaAs substrates were grown by solid source molecular beam epitaxy using a radio frequency plasma source. Photoluminescence (PL) reveals a redshift in the PL peak of InGaAsN/GaAs quantum well with increasing N concentration. Rapid thermal annealing (RTA) of InGaAsN/GaAs quantum wells is shown to increase N incorporation and photoluminescence efficiency. A PL peak of 1.35 μm has been obtained at room temperature from an InGaAsN/GaAs quantum well after RTA at 550 °C. Room temperature pulsed operation of InGaAsN/GaAs single quantum well laser was demonstrated.
Keywords
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