Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine
- 26 May 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (21) , 2861-2863
- https://doi.org/10.1063/1.119025
Abstract
GaAsN layers with good structural quality and surface morphology have been successfully grown on a GaAs substrate using atmospheric pressure metal organic vapor phase epitaxy. A new combination of precursors namely, dimethylhydrazine for nitrogen and tertiarybutylarsine instead of conventional arsine for arsenic, greatly facilitated growths at temperatures as low as 500 °C. Layers with N content as high as 3% and corresponding to room temperature photoluminescence (PL) peak wavelength of 1.17 μm (1.064 eV) have been obtained.Keywords
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