Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
- 1 October 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (10R) , 4413
- https://doi.org/10.1143/jjap.32.4413
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Luminescence quenching and the formation of the GaP1−xNx alloy in GaP with increasing nitrogen contentApplied Physics Letters, 1992
- Conductivity Control of AlGaN. Fabrication of AlGaN/GaN Multi-Heterośtructure and their Application to UV/Blue Light Emitting DevicesMRS Proceedings, 1992
- Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxyApplied Physics Letters, 1991
- Energy band-gap bowing parameter in an AlxGa1−x N alloyJournal of Applied Physics, 1987
- Energy Band Structure and Lattice Constant Chart of III-V Mixed Semiconductors, and AlGaSb/AlGaAsSb Semiconductor Lasers on GaSb SubstratesJapanese Journal of Applied Physics, 1980
- Elementary theory of heterojunctionsJournal of Vacuum Science and Technology, 1977
- Band structures of GaN and AINJournal of Physics and Chemistry of Solids, 1971
- Electronic Structures of Semiconductor AlloysPhysical Review B, 1970
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. II. Ionization Potentials and Interband Transition EnergiesPhysical Review B, 1969
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. I. Electronic Dielectric ConstantPhysical Review B, 1969