An 11-GHz 3-V SiGe voltage-controlled oscillator with integrated resonator
- 24 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- RF components implemented in an analog SiGe bipolar technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Si/SiGe HBT technology for low-cost monolithic microwave integrated circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 3 V 4 GHz nMOS voltage-controlled oscillator with integrated resonatorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- SiGe HBT technology: device and application issuesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002