High-performance antimonide-based heterostructure backward diodes for millimeter-wave detection
- 10 December 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 23 (10) , 585-587
- https://doi.org/10.1109/led.2002.803760
Abstract
Small-area antimonide-based backward diodes for zero-bias millimeter-wave detection have been fabricated and tested. The devices were fabricated using high-resolution I-line stepper lithography, allowing accurate control of the small device active area required for operation at W-band. The devices exhibit excellent measured performance from 1-110 GHz, with responsivities when driven from a 50-/spl Omega/ source of 2540 V/W at 95 GHz. This translates to a projected responsivity of 11.5 /spl times/ 10/sup 3/ V/W at 95 GHz for a conjugately matched detector. The compression characteristics of the detectors have been measured, with 1.2 dB of responsivity compression for an input power of 8 /spl mu/W.Keywords
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