New Epitaxially Stabilized CoSi Phase with the CsCl Structure
- 13 February 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 74 (7) , 1163-1166
- https://doi.org/10.1103/physrevlett.74.1163
Abstract
We report the first synthesis of CoSi in the CsCl structure, as an epitaxial film on Si(111). Experimentally and theoretically we find that the lower stability of this phase, relative to that of FeSi with the same structure, can be understood only by taking into account the energy contribution for the interface bonding, in addition to the elastic energy.Keywords
This publication has 18 references indexed in Scilit:
- Elastic and vibrational properties of pseudomorphic FeSi filmsPhysical Review B, 1994
- Electronic structure and bonding in epitaxially stabilized cubic iron silicidesPhysical Review B, 1993
- Electronic Structure and Total-Energy of FeSi2 Pseudomorphic PhasesMRS Proceedings, 1993
- Observation and Characterization of the Pseudomorphic to Stable Phase Transitions of Fe1-xSi on Si(111)MRS Proceedings, 1992
- Study of Hall Effect and Magnetoresistance on a Novel Epitaxial FeSi Phase on Si(lll)MRS Proceedings, 1992
- Electronic structure of β-Physical Review B, 1990
- Electronic structure and properties ofandin the fluorite and adamantane structuresPhysical Review B, 1987
- Electron spectroscopy study of FeSi and CoSiPhysical Review B, 1987
- Structural transitions in epitaxial overlayersJournal de Physique, 1986
- Structures and compositions of the silicides of ruthenium, osmium, rhodium and iridiumJournal of the Less Common Metals, 1962