Electronic structure and properties ofandin the fluorite and adamantane structures
- 15 August 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 36 (5) , 2493-2503
- https://doi.org/10.1103/physrevb.36.2493
Abstract
An electronic-band-structure study of and is performed by means of the linear-muffin-tin-orbital method for both the fluorite and the hypothetical adamantane structures, i.e., silicon with tetrahedral interstitial metal atoms. Energy bands along symmetry lines, densities of states, charge densities, and total energies are presented. In addition, the equilibrium lattice constant, bulk modulus, and cohesive energies are obtained from total-energy and pressure calculations as a function of volume. Special attention is given to the relative stability of both structures. The experimentally observed fluorite structure is found to be lower in energy by more than 1 eV in both cases. The total-energy difference is analyzed and discussed in terms of the electronic structure. The electrostatic energy due to the charge transfer is found to play a significant role, as well as the tendency to form Ni—Si covalent bonds in the fluorite case.
Keywords
This publication has 26 references indexed in Scilit:
- Schottky-barrier heights of single-crystalon Si(111): The effect of a surfacep-njunctionPhysical Review B, 1986
- Transistor action in Si/CoSi2/Si heterostructuresApplied Physics Letters, 1985
- Electronic properties on silicon-transition metal interface compoundsSurface Science Reports, 1985
- Correlation of Schottky-Barrier Height and Microstructure in the Epitaxial Ni Silicide on Si(111)Physical Review Letters, 1985
- Specular Boundary Scattering and Electrical Transport in Single-Crystal Thin Films of CoPhysical Review Letters, 1985
- Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor InterfacesPhysical Review Letters, 1984
- Diffusion layers and the Schottky-barrier height in nickel silicide—silicon interfacesPhysical Review B, 1983
- Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiEpitaxial StructuresPhysical Review Letters, 1983
- Diffusion-layer microstructure of Ni on Si(100)Physical Review B, 1982
- Electronic structure of nickel silicidesSi, NiSi, and NiPhysical Review B, 1982