Electronic properties on silicon-transition metal interface compounds
- 31 May 1985
- journal article
- review article
- Published by Elsevier in Surface Science Reports
- Vol. 4 (5-6) , 271-364
- https://doi.org/10.1016/0167-5729(85)90005-6
Abstract
No abstract availableKeywords
This publication has 100 references indexed in Scilit:
- Theoretical developments in high resolution Auger electron studies of solidsApplications of Surface Science, 1982
- Intermixing at the early stage of the Si(111)/Ag interface growthApplications of Surface Science, 1982
- On the chemisorption of Ge on GaAs(110) surfaces: UPS and work function measurementsApplications of Surface Science, 1982
- Investigation of NiSi and Pd3Si thin films by AES and XPSPhysica Status Solidi (a), 1980
- Perturbation treatment of correlations in transition metalsJournal de Physique, 1980
- Electron energy loss measurements on the gold-silicon interface.Journal de Physique Lettres, 1980
- Studies of formation of silicides and their barrier heights to siliconPhysica Status Solidi (a), 1973
- Auger spectroscopy of submonolayer gold depositions on siliconPhysica Status Solidi (b), 1973
- Diffuse interface in Si (substrate)-Au (evaporated film) systemApplied Physics Letters, 1973
- Structure and electrical characteristics of epitaxial palladium silicide contacts on single crystal silicon and diffused P-N diodesSolid-State Electronics, 1972