Studies of formation of silicides and their barrier heights to silicon
- 16 December 1973
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 20 (2) , 653-668
- https://doi.org/10.1002/pssa.2210200228
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Alloying of thin palladium films with single crystal and amorphous siliconPhysica Status Solidi (a), 1973
- Analysis of formation of hafnium silicide on siliconApplied Physics Letters, 1973
- Growth Kinetics Observed in the Formation of Metal Silicides on SiliconApplied Physics Letters, 1972
- Hafnium-Silicon Schottky Barriers: Large Barrier Height on p-Type Silicon and Ohmic Behavior on n-Type SiliconApplied Physics Letters, 1971
- LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUMApplied Physics Letters, 1971
- Analysis of amorphous layers on silicon by backscattering and channeling effect measurementsSurface Science, 1970
- Characteristics of aluminum-silicon schottky barrier diodeSolid-State Electronics, 1970
- Interstitial AlloysPublished by Springer Nature ,1967
- Metal-semiconductor surface barriersSolid-State Electronics, 1966
- The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various TemperaturesPhysical Review B, 1931