Growth Kinetics Observed in the Formation of Metal Silicides on Silicon
- 1 May 1972
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 20 (9) , 359-361
- https://doi.org/10.1063/1.1654186
Abstract
Backscattering of MeV He ions has been used to investigate the composition and growth kinetics of metal silicides formed from thin films of Pd, Ti, Cr, and Mo evaporated onto Si. In each system studied, one silicide phase predominated (Pd2Si, TiSi2, CrSi2, and MoSi2). The thickness of the phase increased with (time)0.5 for Pd2Si and TiSi2, and linearly in time for CrSi2 and MoSi2. It was found that these two time dependencies correlate directly with the reaction sensitivity to a thin oxide interface (<100 Å) and to the extent of the silicide formation in the neighborhood of a typical device contact region.Keywords
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