Technique for producing ’’good’’ GaAs solar cells using poor-quality substrates
- 15 October 1975
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (8) , 447-449
- https://doi.org/10.1063/1.88512
Abstract
Relatively good GaAs solar cells can be made from poor‐quality substrates by making the junction deep (≳1 μ) instead of shallow and by ’’leaching’’ both the pGaAs and nGaAs regions during the growth process. AM0 efficiencies of 14.7% (19% AM1) have been obtained from substrates with starting substrate diffusion lengths of 0.6 μ.Keywords
This publication has 4 references indexed in Scilit:
- GaAs concentrator solar cellApplied Physics Letters, 1975
- Minority carrier diffusion length and recombination lifetime in GaAs:Ge prepared by liquid-phase epitaxyJournal of Applied Physics, 1973
- High-efficiency Ga1−xAlxAs–GaAs solar cellsApplied Physics Letters, 1972
- Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium ArsenideJournal of Applied Physics, 1964