Minority carrier diffusion length and recombination lifetime in GaAs:Ge prepared by liquid-phase epitaxy
- 1 February 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (2) , 827-831
- https://doi.org/10.1063/1.1662266
Abstract
The electron diffusion length in p‐type GaAs:Ge grown by liquid‐phase epitaxy has been measured as a function of hole concentration. The direct measurements were made by two different techniques —a laser beam scan on beveled samples and an α particle scan on cleaved samples. These measurements are in good agreement and show that the diffusion length increases from ∼6 μm at p=1×1019 cm−3 to ∼20 μm at p=7×1016 cm−3. In addition, the diffusion length was estimated from electroluminescent decay times of p‐n junctions and the values obtained were in reasonable agreement with those directly measured for the same materials.This publication has 11 references indexed in Scilit:
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