EFFICIENT PHOTOEMISSION FROM Ge-DOPED GaAs GROWN BY LIQUID-PHASE EPITAXY
- 15 February 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 18 (4) , 121-122
- https://doi.org/10.1063/1.1653590
Abstract
Efficient photoemission with white light sensitivities as high as 1100 μA/lm has been obtained from Ge‐doped GaAs layers grown by liquid‐phase epitaxy. The hole concentrations of the samples were relatively low (5×1017–2×1018 cm−3), and the sample surfaces were chemically polished prior to cesium‐oxygen activation. Quantum yield data show an unusually high infrared response and suggest long diffusion lengths, between 2 and 7 μ, for the photo‐excited Γ‐electrons.Keywords
This publication has 9 references indexed in Scilit:
- Germanium-Doped Gallium ArsenideJournal of Applied Physics, 1970
- Factors affecting the photoemission from caesium oxide covered GaAsSolid-State Electronics, 1969
- Transport Properties of GaAs Obtained from Photoemission MeasurementsPhysical Review B, 1969
- EFFECTS OF HEAT CLEANING ON THE PHOTOEMISSION PROPERTIES OF GaAs SURFACESApplied Physics Letters, 1969
- Efficient photoemission from GaAs epitaxial layersSolid State Communications, 1969
- Luminescence due to Ge Acceptors in GaAsJournal of Applied Physics, 1968
- GaAs-Cs: A new type of photoemitterSolid State Communications, 1965
- Absorption edge in degenerate n-type gallium arsenideJournal of Physics and Chemistry of Solids, 1963
- Absorption Edge in Degenerate p-Type GaAsJournal of Applied Physics, 1962