Efficient photoemission from GaAs epitaxial layers
- 15 April 1969
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 7 (8) , 615-617
- https://doi.org/10.1016/0038-1098(69)90629-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- PHOTOEMISSION FROM GaAs THIN FILMSApplied Physics Letters, 1968
- Atom Ejection Studies for Sputtering of SemiconductorsJournal of Applied Physics, 1966
- Depths of Low-Energy Ion Bombardment Damage in GermaniumJournal of Applied Physics, 1966
- Incorporation of Zinc into Epitaxial GaAs Using Diethyl ZincJournal of the Electrochemical Society, 1966
- GaAs-Cs: A new type of photoemitterSolid State Communications, 1965
- Absorption Edge in Degenerate p-Type GaAsJournal of Applied Physics, 1962