Factors affecting the photoemission from caesium oxide covered GaAs
- 1 November 1969
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (11) , 893-901
- https://doi.org/10.1016/0038-1101(69)90047-1
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Fermi level stabilization at cesiated semiconductor surfacesSolid State Communications, 1967
- Experimental Evidence for Optical Population of theMinima in GaAsPhysical Review Letters, 1967
- GaAs-Cs: A new type of photoemitterSolid State Communications, 1965
- Double Barrier in Thin-Film TriodesJournal of Applied Physics, 1963
- Avalanche Breakdown in Gallium ArsenideJunctionsPhysical Review B, 1962
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962
- Absorption Edge in Degenerate p-Type GaAsJournal of Applied Physics, 1962
- Zur Kenntnis der Verdampfungsvorgänge bei den AlkalimetalloxidenZeitschrift für anorganische und allgemeine Chemie, 1960