Experimental Evidence for Optical Population of theMinima in GaAs
- 10 April 1967
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 18 (15) , 597-599
- https://doi.org/10.1103/physrevlett.18.597
Abstract
Electrons photoexcited in -GaAs (with Cs surface monolayer) are found to "thermalize" in either the or conduction-band minima while diffusing to the surface. Two strong peaks separated by 0.3 eV of photoemitted electrons associated with these minima are observed in the energy distribution curves for .
Keywords
This publication has 3 references indexed in Scilit:
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966
- GaAs-Cs: A new type of photoemitterSolid State Communications, 1965
- Spectral Analysis of Photoemissive Yields in Si, Ge, GaAs, GaSb, InAs, and InSbPhysical Review B, 1965