Spectral Analysis of Photoemissive Yields in Si, Ge, GaAs, GaSb, InAs, and InSb
- 2 August 1965
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 139 (3A) , A912-A920
- https://doi.org/10.1103/physrev.139.a912
Abstract
The data of Allen and Gobeli on photoemissive yields from partially cesiated surfaces of several semiconductors with photon energies between 2 and 6 eV are analyzed in detail. The results are shown to be consistent with direct transitions in energy-band models obtained from semiempirical pseudopotentials based on interband optical edges. The correlation with reflectivity structure is good, and several new transitions are resolved which were not apparent in previous optical studies.Keywords
This publication has 13 references indexed in Scilit:
- Photoelectric Properties of Cleaved GaAs, GaSb, InAs, and InSb Surfaces; Comparison with Si and GePhysical Review B, 1965
- Reflectivity of HgSe and HgTe from 4 to 12 eV at 12 and 300°KPhysical Review B, 1964
- Ultraviolet Absorption of Insulators. II. Partially Ionic CrystalsPhysical Review B, 1964
- High Vacuum Deposition of CesiumReview of Scientific Instruments, 1963
- Reflectance and Photoemission From SiPhysical Review Letters, 1962
- Photoemissive Studies of the Band Structure of SiliconPhysical Review Letters, 1962
- The valence band structure of the III–V compoundsJournal of Physics and Chemistry of Solids, 1962
- Direct and Indirect Excitation Processes in Photoelectric Emission from SiliconPhysical Review B, 1962
- Theory of Photoelectric Emission from SemiconductorsPhysical Review B, 1962
- Surface measurements on freshly cleaved silicon p-n junctionsJournal of Physics and Chemistry of Solids, 1960