Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers
- 26 November 2002
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 248, 563-567
- https://doi.org/10.1016/s0022-0248(02)01880-8
Abstract
No abstract availableKeywords
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