Stress evolution during metalorganic chemical vapor deposition of GaN
- 18 January 1999
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (3) , 356-358
- https://doi.org/10.1063/1.123070
Abstract
The evolution of stress in gallium nitride films on sapphire has been measured in real time during metalorganic chemical vapor deposition. In spite of the 16% compressive lattice mismatch of GaN to sapphire, we find that GaN consistently grows in tension at 1050 °C. Furthermore, in situ stress monitoring indicates that there is no measurable relaxation of the tensile growth stress during annealing or thermal cycling.Keywords
This publication has 13 references indexed in Scilit:
- The effect of H2 on morphology evolution during GaN metalorganic chemical vapor depositionApplied Physics Letters, 1997
- Evolution of stress relaxation and yellow luminescence in GaN/sapphire by Si incorporationApplied Physics Letters, 1997
- Real-time stress evolution during Si1-xGex Heteroepitaxy: Dislocations, islanding, and segregationJournal of Electronic Materials, 1997
- Strain determination in heteroepitaxial GaNApplied Physics Letters, 1997
- Microstructure of GaN epitaxial films at different stages of the growth process on sapphire (0 0 0 1)Journal of Crystal Growth, 1997
- Residual strain in GaN epilayers grown on sapphire and (6H)SiC substratesApplied Physics Letters, 1996
- Thermal stress in GaN epitaxial layers grown on sapphire substratesJournal of Applied Physics, 1995
- Thermal expansion of gallium nitrideJournal of Applied Physics, 1994
- Stresses and deformation processes in thin films on substratesCritical Reviews in Solid State and Materials Sciences, 1988
- The tension of metallic films deposited by electrolysisProceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 1909