Thermal stress in GaN epitaxial layers grown on sapphire substrates
- 1 May 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (9) , 4389-4392
- https://doi.org/10.1063/1.359465
Abstract
Thermal stress in GaN epitaxial layers with different thicknesses grown on sapphire substrates by metalorganic vapor phase epitaxy using an AlN buffer layer was investigated. Biaxial compressive stress in the GaN layer, due to the difference in the thermal expansion coefficients between GaN and sapphire, was obtained by measuring the curvature of wafer bending, and the observed stress agreed with the calculated stress. In Raman measurements, the E2 phonon peak of GaN was found to shift and broaden with the stress as a consequence of the change of the elastic constants with strain. The frequency shift Δω (in cm−1) was obtained for the first time, given by the relation: Δω=6.2 σ, where the biaxial stress σ is expressed in GPa.This publication has 22 references indexed in Scilit:
- GaN Growth Using GaN Buffer LayerJapanese Journal of Applied Physics, 1991
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986
- Study of cracking mechanism in GaN/α-Al2O3 structureJournal of Applied Physics, 1985
- GaN blue light emitting diodes prepared by metalorganic chemical vapor depositionJournal of Applied Physics, 1984
- Effect of growth parameters on the properties of GaN : Zn epilayersJournal of Crystal Growth, 1977
- Growth of GaN Thin‐Films from Triethylgallium MonamineJournal of the Electrochemical Society, 1975
- Electrical properties of n-type vapor-grown gallium nitrideJournal of Physics and Chemistry of Solids, 1973
- The Use of Metalorganics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969