Kilovolt electron energy loss distribution in Si

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Abstract
Using the electron-beam-induced barrier currents and the Monte Carlo simulation methods it was possible to determine the depth-dose function as well as the distribution function of the generation source for electron-hole pairs perpendicular to the injection direction. The depth-dose function was compared with results obtained by Everhart and Hoff. By fitting the simulated barrier current profile to the measured one the authors could estimate the relatively small width of the space charge region of the p-n junction employed for the measurements. Furthermore, the spatial dose distribution of Si was described in an analytic approximation of the Monte Carlo simulation using two Gaussian functions concerned with the spreading of the penetrating electron beam and the diffusion of the primary electrons within the target, respectively. This approximation was based on treatments of the scattering process of the primary electrons given by Bethe and co-workers, Bothe and Archard.