NH3-Plasma-Nitridation Process of (100) GaAs Surface Observed by Angle-Dependent X-Ray Photoelectron Spectroscopy
- 1 February 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (2S) , 1075
- https://doi.org/10.1143/jjap.34.1075
Abstract
X-ray photoelectron spectroscopy with varying the photoelectron take-off angle reveals the surface-nitridation process of (100) GaAs by an rf NH3 plasma with a magnetic field. The plasma treatment for shorter time or at lower temperature leads to the formation of a Ga-As-N ternary-compound layer on the GaAs surface. Increasing the treatment time or treatment temperature changes the main part of the surface layer into GaN due to the desorption of As. The oxidation resistance is also examined, showing that this plasma-nitridation method is one of the promising technologies for the passivation of (100) CaAs surface.Keywords
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