Laser-annealing behavior of a phosphorus-implanted silicon substrate covered with a SiO2 film
- 1 May 1979
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (5) , 3783-3784
- https://doi.org/10.1063/1.326296
Abstract
Laser‐annealing behavior of phosphorus‐implanted silicon substrates is investigated as a function of the SiO2 film thickness formed on implanted surfaces. Surface‐carrier concentration after laser irradiation through the SiO2 layers shows periodic enhancement in relation to SiO2 thickness. Calculation of laser energy transferred into the silicon surface through various SiO2 film thicknesses is carried out and the results agree well with the experiments.This publication has 3 references indexed in Scilit:
- Physical and electrical properties of laser-annealed ion-implanted siliconApplied Physics Letters, 1978
- Laser annealing of boron-implanted siliconApplied Physics Letters, 1978
- Laser annealing of arsenic implanted siliconPhysics Letters A, 1977