Influence from free-carrier tails in deep level transient spectroscopy (DLTS)
- 30 April 1983
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 46 (3) , 255-258
- https://doi.org/10.1016/0038-1098(83)90263-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Deep level study by analysis of thermal and optical transients in semiconductor junctionsApplied Physics A, 1980
- Capture from free-carrier tails in the depletion region of junction barriersApplied Physics Letters, 1980
- Trap depth and electron capture cross section determination by trap refilling experiments in Schottky diodesApplied Physics Letters, 1978
- Thermal activation energy of the gold−acceptor level in siliconJournal of Applied Physics, 1975
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctionsJournal of Applied Physics, 1974