Properties of Photoluminescence from ZnTe–ZnSe Superlattices
- 1 September 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (9A) , L707
- https://doi.org/10.1143/jjap.25.l707
Abstract
Excitation spectra and temperature dependence measurements of the photoluminescence(PL) were carried out for the various kinds of the ZnTe–ZnSe superlattices (SLs) prepared by hot wall epitaxy. First observation of strong absorption band by about 0.2 eV above the PL emission band and observed activation energy (0.2 eV) of the thermal quenching which are independent of the SL structures suggest that the PL is related to the radiative recombinations between band edge and localized centers, i.e. Free-to-Bound transitions.Keywords
This publication has 5 references indexed in Scilit:
- Raman scattering from ZnTe-ZnSe strained-layer superlatticesApplied Physics Letters, 1986
- Temperature dependence of photoluminescence of ZnS-ZnSe superlatticesJournal of Crystal Growth, 1985
- A proposal for p-type ZnS1-xSex–ZnTe superlatticesJournal of Applied Physics, 1985
- Molecular Beam Epitaxial Growth of ZnTe and ZnSeJournal of the Electrochemical Society, 1980
- Excitons and the Absorption Edge in ZnSePhysical Review B, 1967