Semi-insulating InP grown by low pressure MOCVD
- 1 March 1987
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 16 (2) , 127-131
- https://doi.org/10.1007/bf02654300
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Very high mobility InP grown by low pressure metalorganic vapor phase epitaxy using solid trimethylindium sourceApplied Physics Letters, 1985
- Photoluminescence study of the growth of indium phosphide by metalorganic chemical vapor depositionJournal of Applied Physics, 1985
- Growth of ultrapure and Si-doped InP by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1985
- Electrical characterization of Fe-doped semi-insulating InP grown by metalorganic chemical vapor depositionApplied Physics Letters, 1984
- Growth of Fe-doped semi-insulating InP by MOCVDJournal of Crystal Growth, 1984
- Analysis of leakage currents in 1.3-µm InGaAsP real-index-guided lasersJournal of Lightwave Technology, 1984
- Direct gigabit modulation of injection lasers - Structure-dependent speed limitationsJournal of Lightwave Technology, 1984
- Electron mobility and free-carrier absorption in InP; determination of the compensation ratioJournal of Applied Physics, 1980
- The Vapor Pressure of Iron PentacarbonylJournal of the Electrochemical Society, 1974
- Heats of Combustion and Formation of Metal Carbonyls. III. Iron Pentacarbonyl; The Nature of the Bonding in Metal Carbonyls1Journal of the American Chemical Society, 1959