Microwave intensity and frequency modulation of heteroepitaxial-ridge-overgrown distributed feedback lasers
- 1 February 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (3) , 233-235
- https://doi.org/10.1063/1.95693
Abstract
The intensity and frequency modulation response of heteroepitaxial-ridge-overgrown distributed feedback lasers are characterized as a function of modulation frequency from 0.2 to as high as 17 GHz. Small-signal intensity modulation measurements show a −3 dB frequency of 7.1 GHz. Efficient frequency modulation (>0.1 GHz/mA) is demonstrated for modulation frequencies up to 13 GHz. A new standard for comparing semiconductor lasers, the chirp to modulated power ratio, is suggested as a means of comparing semiconductor lasers and as an aid to understanding the interaction of FM and IM in a semiconductor laser.Keywords
This publication has 9 references indexed in Scilit:
- Heteroepitaxial ridge-overgrown distributed feedback laser at 1.5 μmApplied Physics Letters, 1984
- A new high-power, narrow-beam transverse-mode stabilized semiconductor laser at 1.5 μm: the heteroepitaxial ridge-overgrown laserApplied Physics Letters, 1984
- 6 GHz direct frequency modulation of cleaved-coupled-cavity channeled-substrate buried-heterostructure lasersIEEE Journal of Quantum Electronics, 1984
- High-speed analog and digital modulation of 1.51-μm wavelength, three-channel buried crescent InGaAsP lasersApplied Physics Letters, 1984
- CO2 laser assisted UV ablative photoetching of Kapton filmsApplied Physics Letters, 1984
- Low threshold ridge waveguide laser at 1.55 μmElectronics Letters, 1983
- Measurement of the linewidth enhancement factor α of semiconductor lasersApplied Physics Letters, 1983
- Direct frequency modulation in AlGaAs semiconductor lasersIEEE Journal of Quantum Electronics, 1982
- Theory of the linewidth of semiconductor lasersIEEE Journal of Quantum Electronics, 1982