High-speed analog and digital modulation of 1.51-μm wavelength, three-channel buried crescent InGaAsP lasers
- 15 August 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (4) , 311-313
- https://doi.org/10.1063/1.95274
Abstract
The microwave modulation characteristics of 300-μm-long, 1.51-μm wavelength, three-channel buried crescent lasers fabricated on semi-insulating InP substrates have been studied. A small-signal bandwidth of 5.7 GHz has been obtained and digital modulation with pseudorandom sequences at 2 and 4 Gb/s has been demonstrated.Keywords
This publication has 7 references indexed in Scilit:
- Three-channel buried-crescent InGaAsP laser with 1.51 μm wavelength on semi-insulating InPElectronics Letters, 1984
- Direct gigabit modulation of injection lasers - Structure-dependent speed limitationsJournal of Lightwave Technology, 1984
- Direct amplitude modulation of short-cavity GaAs lasers up to X-band frequenciesApplied Physics Letters, 1983
- Short cavity InGaAsP/InP lasers with dielectric mirrorsApplied Physics Letters, 1983
- Microwave Circuit Models of Semiconductor Injection LasersIEEE Transactions on Microwave Theory and Techniques, 1983
- Low threshold InGaAsP/InP lasers with microcleaved mirrors suitable for monolithic integrationApplied Physics Letters, 1982
- Groove GaInAsP laser on semi-insulating InPElectronics Letters, 1981