Short cavity InGaAsP/InP lasers with dielectric mirrors
- 15 May 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (10) , 848-850
- https://doi.org/10.1063/1.93787
Abstract
Short cavity length (38 μm) lasers have been fabricated using a recently developed microcleavage technique. SiO2-amorphous Si multilayer coatings have been evaported on the lasers to obtain high reflectivity mirrors. The lasers have current thresholds as low as 3.8 mA with 85% reflecting front mirror and high reflectivity rear mirror and 2.9 mA with two high reflectivity mirrors. Single longitudinal mode operation is observed over a wide range of driving currents and temperatures.Keywords
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