The effects of T1 impurities on the properties of amorphous SiC:H films prepared by co-sputtering
- 1 August 1996
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 281-282, 302-304
- https://doi.org/10.1016/0040-6090(96)08662-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Improvement of photoconductivity of a-SiC:H films by introducing nitrogen during magnetron sputtering processJournal of Applied Physics, 1991
- Doping effects of aluminium on the properties of hydrogenated amorphous silicon–carbon alloy films prepared by magnetron sputteringPhilosophical Magazine Part B, 1990
- Preparation of a-SiC:H/a-GeC:H superlattices by dual magnetron sputteringJournal of Applied Physics, 1989
- Structural, optical and electronic properties of amorphous SiC: H alloys prepared by magnetron sputtering of silicon in methane-argon gas mixturesPhilosophical Magazine Part B, 1985
- Highly photoconductive and photosensitive hydrogenated amorphous silicon carbon alloy films prepared by magnetron sputteringApplied Physics Letters, 1985