Highly photoconductive and photosensitive hydrogenated amorphous silicon carbon alloy films prepared by magnetron sputtering
- 1 January 1985
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (1) , 61-63
- https://doi.org/10.1063/1.95853
Abstract
Undoped hydrogenated amorphous silicon carbon alloy thin films were prepared by the magnetron sputtering of silicon in a gas mixture of methane argon. It is found that the photoconductivities of the films with carbon concentration above 15% are one order of magnitude or more larger than the films prepared by the glow discharge decomposition of silane-methane gas mixture reported by other groups before now. Moreover, the photosensitivities of these films are larger than those of the glow discharge films, as a result of small dark conductivities of the former compared with those of the latter.Keywords
This publication has 28 references indexed in Scilit:
- Raman spectra of amorphous SiCSolid State Communications, 1983
- Amorphous silicon-carbon-fluorine alloy filmsPhysical Review B, 1983
- Optical and Electrical Properties of Hydrogenated Amorphous Silicon CarbidePhysica Status Solidi (b), 1982
- Properties and structure of a-SiC:H for high-efficiency a-Si solar cellJournal of Applied Physics, 1982
- Studies of the sputter deposition of carbon, silicon and SiC filmsThin Solid Films, 1982
- Photoinduced Optical Changes in Amorphous Silicon-Carbon Alloy Prepared by Reactive Sputtering in an Atmosphere of PropaneJapanese Journal of Applied Physics, 1982
- SiC synthesis by a plasma deposition processThin Solid Films, 1981
- Effects of Target Materials on the Structural Properties of Sputtered SiC FilmsJournal of the Electrochemical Society, 1980
- Vibrational spectrum of hydrogenated amorphous Si-C filmsPhysica Status Solidi (b), 1979
- Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge techniquePhilosophical Magazine, 1977