Band‐Filling Model for Injection Luminescence at Higher Temperatures
- 1 January 1967
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 23 (2) , 587-593
- https://doi.org/10.1002/pssb.19670230218
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Congrès, conférences, réunions nationales et internationales annoncées pour 1966Population, 1966
- Effect of temperature on the stimulated emission from GaAs p-n junctionsSolid-State Electronics, 1964
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964
- BAND-FILLING MODEL FOR GaAs INJECTION LUMINESCENCEApplied Physics Letters, 1963
- Recombination Radiation in GaAsPhysical Review B, 1963