Electrons and holes drift velocity in silicon at very low temperature
- 31 October 1968
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 6 (10) , 727-728
- https://doi.org/10.1016/0038-1098(68)90573-5
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Anisotropy of hot electrons in high resistivity silicon - preliminary resultsSolid State Communications, 1967
- On a new method for measuring the charge carriers drift mobility in high resistivity siliconPhysics Letters, 1965