Anisotropy of hot electrons in high resistivity silicon - preliminary results
- 30 September 1967
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 5 (9) , 747-749
- https://doi.org/10.1016/0038-1098(67)90364-x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Conductivity anisotropy of hot electrons in n-type silicon heated by microwave fieldsJournal of Physics and Chemistry of Solids, 1966
- On a new method for measuring the charge carriers drift mobility in high resistivity siliconPhysics Letters, 1965
- Conductivity anisotropy and hot electron temperature in siliconJournal of Physics and Chemistry of Solids, 1964
- The field-dependence of carrier mobility in silicon and germaniumJournal of Physics and Chemistry of Solids, 1960