Conductivity anisotropy and hot electron temperature in silicon
- 1 February 1964
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 25 (2) , 247-251
- https://doi.org/10.1016/0022-3697(64)90085-x
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Anisotropy in the Conductivity of Hot Holes in GermaniumJournal of Applied Physics, 1962
- Drift Velocity and Anisotropy of Hot Electrons inGermaniumPhysical Review B, 1962
- Distribution Functions for Hot Electrons in Many-Valley SemiconductorsPhysical Review B, 1961
- Theorie der elektrischen Leitfähigkeit in Si. II. Bereich mittelstarker Felder („warme Elektronen”︁)Annalen der Physik, 1961
- Scattering of Conduction Electrons by Lattice Vibrations in SiliconPhysical Review B, 1960
- Effect of High Pressure on Some Hot Electron Phenomena in-Type GermaniumPhysical Review B, 1960
- Millimeter Cyclotron Resonance in SiliconPhysical Review Letters, 1960
- On the Hot Electron Effect in n-Type GermaniumJournal of Electronics and Control, 1958
- Anisotropy of Hot Electrons in n-type GermaniumJournal of the Physics Society Japan, 1958
- Transport Properties of a Many-Valley SemiconductorBell System Technical Journal, 1955